Tin dioxide nanoparticles as catalyst precursors for plasma-assisted vapor-liquid-solid growth of silicon nanowires with well-controlled density.

Author(s) Dai, L.; Maurin, I.; Foldyna, M.; Alvarez, J.; Wang, W.; Mohsin, H.; Chen, W.; Kleider, J.P.; Maurice, J.L.; Gacoin, T.; Cabarrocas, P.Roca I.
Journal Nanotechnology
Date Published 2018 Oct 26
Abstract

The fabrication of arrays of silicon nanowires (Si NWs) with well-defined surface coverage using the vapor-liquid-solid process requires a good control of the density and size distribution for the metal catalyst. We report on a cost-effective bottom-up approach to produce Si NWs by a low-temperature deposition technology using plasma-enhanced chemical vapor deposition and tin dioxide (SnO) nanoparticles as the source of tin catalyst. This strategy offers a straightforward method to select specific particle sizes by conventional colloidal techniques, and to tune the surface coverage using a polyelectrolyte layer to efficiently immobilize the particles on the substrate by electrostatic grafting. After a further step of reduction into tin metal droplets using hydrogen plasma treatment, the catalyst particles are used for the growth of Si NWs. This approach allows the prodcution of controlled Si NWs arrays which can be used as a template for radial junction thin film solar cells.

DOI 10.1088/1361-6528/aad7db
ISSN 1361-6528
Citation Dai L, Maurin I, Foldyna M, Alvarez J, Wang W, Mohsin H, et al. Tin dioxide nanoparticles as catalyst precursors for plasma-assisted vapor-liquid-solid growth of silicon nanowires with well-controlled density. Nanotechnology. 2018;29(43):435301.

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