Tin oxide artificial synapses for low power temporal information processing.

Author(s) Le, P.Yen; Tran, H.; Zhao, Z.C.; McKenzie, D.R.; McCulloch, D.G.; Holland, A.; Murdoch, B.James; Partridge, J.
Journal Nanotechnology
Date Published 2019 Apr 16
Abstract

Lateral memristors configured with inert Pt contacts and mixed phase tin oxide layers have exhibited immediate, forming-free, low-power bidirectional resistance switching. Activity dependent conductance and relaxation in the low resistance state resembled short term potentiation in biological synapses. After scanning probe microscopy, X-ray photoelectron spectroscopy and electrical measurements, the device characteristics were attributed to Joule heating induced decomposition of the minority SnO phase and formation of a SnO2 conducting filament with higher effective n-type doping. Finally, the devices recognized input voltage pulse sequences and spectral data by returning unique conductance states, suggesting suitability for bio-inspired pattern recognition systems.

DOI 10.1088/1361-6528/ab19c9
ISSN 1361-6528
Citation Le PY, Tran H, Zhao ZC, McKenzie DR, McCulloch DG, Holland A, et al. Tin oxide artificial synapses for low power temporal information processing. Nanotechnology. 2019.

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