Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

Author(s) Lin, Y.R.; Tsai, W.T.; Wu, Y.C.; Lin, Y.H.
Journal Materials (Basel)
Date Published 2017 Nov 07
Abstract

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

DOI 10.3390/ma10111276
ISSN 1996-1944
Citation Lin Y-, Tsai W-, Wu Y-, Lin Y-. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact. Materials (Basel). 2017;10(11).

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