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Gallium Fluoride
Sputtering Target |
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| Product |
Product Code |
Order or Specifications |
99.9% Gallium Fluoride Sputtering Target |
GA-F-03ST |
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99.99% Gallium Fluoride Sputtering Target |
GA-F-04ST |
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99.999% Gallium Fluoride Sputtering Target |
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American Elements specializes in producing high purity Gallium fluoride sputtering targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Gallium Fluoride as rods, powder and plates. Other shapes are available by request.
Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p1. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor.
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| Formula |
CAS No. |
Appearance |
Molecular Weight |
| GaF3 |
7783-51-9 |
White Powder |
126.72 |
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Recent Research & Development for Gallium
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Convenient Synthesis of Aluminum and Gallium Phosphonate Cages.
Inorg Chem. 2008 Mar 26; [Epub ahead of print]
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Base free lithium-organoaluminate and the gallium congener: potential precursors to heterometallic assemblies.
Chem Commun (Camb). 2007 Dec 14;(46):4934-6.
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Formation of High-Mass Cluster Ions from Compound Semiconductors Using Time-of-Flight Secondary Ion Mass Spectrometry with Cluster Primary Ions.
Anal Chem. 2008 Mar 22; [Epub ahead of print]
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Detection of an Infected Abdominal Aortic Aneurysm With Three-Phase Bone Scan and Gallium-67 Scan.
Clin Nucl Med. 2008 Apr;33(4):305-307.
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Rapid formation of metal-organic nano-capsules gives new insight into the self-assembly process.
Chem Commun (Camb). 2008 Apr 7;(13):1539-41. Epub 2008 Feb 27.
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Off-axis refractive mass-transported gallium-phosphide microlens array for the reduction of distortion in an optical interconnect system.
Appl Opt. 2000 Nov 10;39(32):6028-33.
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Facile one-pot synthesis of 5-substituted hydantoins.
Org Biomol Chem. 2008 Mar 21;6(6):988-91. Epub 2008 Feb 14.
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Investigation on damage of DNA molecules under irradiation of low frequency ultrasound in the presence of hematoporphyrin-gallium (HP-Ga) complex.
Ultrason Sonochem. 2008 Feb 5; [Epub ahead of print]
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Radionuclide imaging of musculoskeletal infection: conventional agents.
Semin Musculoskelet Radiol. 2007 Dec;11(4):335-52.
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Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells.
Dalton Trans. 2008 Mar 21;(11):1487-91. Epub 2008 Feb 12.
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Spatial-mode control of vertical-cavity lasers with micromirrors fabricated and replicated in semiconductor materials.
Appl Opt. 1999 May 10;38(14):3030-8.
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Mass-transport fabrication of off-axis and prismatic gallium phosphide optics.
Appl Opt. 1999 May 10;38(14):2979-85.
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Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.
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Resistance of planktonic and biofilm-grown Burkholderia cepacia complex isolates to the transition metal gallium.
J Antimicrob Chemother. 2008 Feb 26; [Epub ahead of print]
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Low-level laser therapy modulates cyclo-oxygenase-2 expression during bone repair in rats.
Lasers Med Sci. 2008 Feb 29; [Epub ahead of print]
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Mid-Infrared (5-12-mum) and Limited (5.5-8.5-mum) Single-Knob Tuning Generated by Difference-Frequency Mixing in Single-Crystal AgGaS(2).
Appl Opt. 1999 Mar 20;38(9):1798-801.
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Primary malignant fibrous histiocytoma of the thyroid: review of the literature with two new cases.
Thyroid. 2008 Jan;18(1):51-5.
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[Atypical peritoneal tuberculosis. Use of laparoscopy in the diagnosis]
Rev Esp Enferm Dig. 2007 Dec;99(12):725-8. Spanish.
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Medical treatment of malignancy-associated hypercalcemia.
Curr Med Chem. 2008;15(4):415-21.
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Finite-Element Analysis of Lossy TE-TM modes in Metal-Clad Optical Waveguides.
Appl Opt. 1998 Aug 20;37(24):5747-54.
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