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Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion

Gallium-Doped Zinc Oxide Nanodispersion

CAS #:

Linear Formula:

ZnO•Ga2O3

MDL Number:

MFCD21608492

EC No.:

215-222-5

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PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion
GA-ZNO-01-NPD
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Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion Properties

Compound Formula

Ga2ZnO4

Molecular Weight

268.853

Appearance

Liquid

Melting Point

Varies by solvent

Boiling Point

Varies by solvent

Density

Varies by solvent

Monoisotopic Mass

265.759979 Da

Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion Health & Safety Information

Signal Word Warning
Hazard Statements H410
Hazard Codes N
Precautionary Statements P273-P391-P501
Transport Information UN 3077 9 / PGIII
WGK Germany 2
MSDS / SDS

About Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion

Gallium-Doped Zinc Oxide Nanoparticle Dispersions are suspensions of gallium-doped zinc oxide nanoparticles in water or various organic solvents such as ethanol or mineral oil. American Elements manufactures oxide nanopowders and nanoparticles with typical particle sizes ranging from 10 to 200nm and in coated and surface functionalized forms. Our nanodispersion and nanofluid experts can provide technical guidance for selecting the most appropriate particle size, solvent, and coating material for a given application. We can also produce custom nanomaterials tailored to the specific requirements of our customers upon request.

Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion Synonyms

Ga:ZnO, Gallium zinc oxide, GZO, Gallium-Doped Zinc Oxide nanopowder suspension, aqueous Gallium-Doped Zinc Oxide nanoparticle solution, Gallium-Doped Zinc Oxide nanofluid

Gallium-Doped Zinc Oxide (GZO) Nanoparticle Dispersion Chemical Identifiers

Linear Formula

ZnO•Ga2O3

Pubchem CID

N/A

MDL Number

MFCD21608492

EC No.

215-222-5

IUPAC Name

oxo(oxogallanyloxy)gallane; oxozinc

SMILES

O=[Zn].O=[Ga]O[Ga]=O

InchI Identifier

InChI=1S/2Ga.4O.Zn

InchI Key

VKVJIVQEOOAUFX-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster.

See more Zinc products. Zinc (atomic symbol: Zn, atomic number: 30) is a Block D, Group 12, Period 4 element with an atomic weight of 65.38. The number of electrons in each of zinc's shells is 2, 8, 18, 2, and its electron configuration is [Ar] 3d10 4s2. Zinc Bohr ModelThe zinc atom has a radius of 134 pm and a Van der Waals radius of 210 pm. Zinc was discovered by Indian metallurgists prior to 1000 BC and first recognized as a unique element by Rasaratna Samuccaya in 800. Zinc was first isolated by Andreas Marggraf in 1746. In its elemental form, zinc has a silver-gray appearance. It is brittle at ordinary temperatures but malleable at 100 °C to 150 °C.Elemental Zinc It is a fair conductor of electricity, and burns in air at high red producing white clouds of the oxide. Zinc is mined from sulfidic ore deposits. It is the 24th most abundant element in the earth's crust and the fourth most common metal in use (after iron, aluminum, and copper). The name zinc originates from the German word "zin," meaning tin.

Recent Research

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer., Shin, Kwan Yup, Tak Young Jun, Kim Won-Gi, Hong Seonghwan, and Kim Hyun Jae , ACS Appl Mater Interfaces, 2017 Apr 19, Volume 9, Issue 15, p.13278-13285, (2017)

High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides., Howard, Dougal P., Marchand Peter, McCafferty Liam, Carmalt Claire J., Parkin Ivan P., and Darr Jawwad A. , ACS Comb Sci, 2017 Apr 10, Volume 19, Issue 4, p.239-245, (2017)

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors., Lee, Heesoo, Chang Ki Soo, Tak Young Jun, Jung Tae Soo, Park Jeong Woo, Kim Won-Gi, Chung Jusung, Jeong Chan Bae, and Kim Hyun Jae , Sci Rep, 2016 Oct 11, Volume 6, p.35044, (2016)

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors., Wan, Chang Jin, Liu Yang Hui, Zhu Li Qiang, Feng Ping, Shi Yi, and Wan Qing , ACS Appl Mater Interfaces, 2016 Apr 20, Volume 8, Issue 15, p.9762-8, (2016)

Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments., Tak, Young Jun, Ahn Byung Du, Park Sung Pyo, Kim Si Joon, Song Ae Ran, Chung Kwun-Bum, and Kim Hyun Jae , Sci Rep, 2016, Volume 6, p.21869, (2016)

Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing., Yoon, Jongwon, Jeong Yunkyung, Kim Heeje, Yoo Seonggwang, Jung Hoon Sun, Kim Yonghun, Hwang Youngkyu, Hyun Yujun, Hong Woong-Ki, Lee Byoung Hun, et al. , Nat Commun, 2016, Volume 7, p.11477, (2016)

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors., Santos, Lídia, Nunes Daniela, Calmeiro Tomás, Branquinho Rita, Salgueiro Daniela, Barquinha Pedro, Pereira Luís, Martins Rodrigo, and Fortunato Elvira , ACS Appl Mater Interfaces, 2015 Jan 14, Volume 7, Issue 1, p.638-46, (2015)

Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer., Luo, Dongxiang, Xu Hua, Zhao Mingjie, Li Min, Xu Miao, Zou Jianhua, Tao Hong, Wang Lei, and Peng Junbiao , ACS Appl Mater Interfaces, 2015 Feb 18, Volume 7, Issue 6, p.3633-40, (2015)

Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz., Zhang, Jiawei, Li Yunpeng, Zhang Binglei, Wang Hanbin, Xin Qian, and Song Aimin , Nat Commun, 2015, Volume 6, p.7561, (2015)

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors., Kim, Hak-Jun, Hwang In-Ju, and Kim Youn-Jea , J Nanosci Nanotechnol, 2014 Dec, Volume 14, Issue 12, p.9443-7, (2014)

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