Multifold Electrical Conductance Enhancements at Metal-Bismuth Telluride Interfaces Modified Using an Organosilane Monolayer.

Title Multifold Electrical Conductance Enhancements at Metal-Bismuth Telluride Interfaces Modified Using an Organosilane Monolayer.
Authors T. Cardinal; M. Kwan; T. Borca-Tasciuc; G. Ramanath
Journal ACS Appl Mater Interfaces
DOI 10.1021/acsami.6b12488
Abstract

Controlling electrical transport across metal-thermoelectric interfaces is key to realizing high efficiency devices for solid state refrigeration and waste-heat harvesting. We obtain up to 17-fold increases in electrical contact conductivity ?c by inserting a mercaptan-terminated organosilane monolayer at Cu-Bi2Te3 and Ni-Bi2Te3 interfaces, yielding similar ?c for both metals by offsetting an otherwise 7-fold difference. The ?c improvements are underpinned by silane-moiety-induced inhibition of Cu diffusion, promotion of high-conductivity interfacial nickel telluride formation, and mercaptan-induced reduction of Bi2Te3 surface oxides. Our findings should enable incorporating nanomolecular layers with appropriately chosen terminal moieties in thermoelectric device metallization schemes without metal diffusion barriers.

Citation T. Cardinal; M. Kwan; T. Borca-Tasciuc; G. Ramanath.Multifold Electrical Conductance Enhancements at Metal-Bismuth Telluride Interfaces Modified Using an Organosilane Monolayer.. ACS Appl Mater Interfaces. 2017;9(3):20012005. doi:10.1021/acsami.6b12488

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