Gallium(III) Telluride Sputtering Target

Ga2Te3
CAS 12024-27-0


Product Product Code Order or Specifications
(5N) 99.999% Gallium Telluride Powder GA3-TE-05-P Contact American Elements
(5N) 99.999% Gallium Telluride Ingot GA3-TE-05-I Contact American Elements
(5N) 99.999% Gallium Telluride Chunk GA3-TE-05-CK Contact American Elements
(5N) 99.999% Gallium Telluride Sputtering Target GA3-TE-05-ST Contact American Elements
(5N) 99.999% Gallium Telluride Lump GA3-TE-05-L Contact American Elements
(5N) 99.999% Gallium Telluride Wafer GA3-TE-05-WSX Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga2Te3 12024-27-0 N/A N/A N/A 234-690-1 N/A N/A [Ga+2].[TeH2-2] InChI=1S/Ga.Te.H/q+2;-2; GSXIPKZTZZWWRS-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density

Exact Mass

Monoisotopic Mass Charge MSDS
Ga2Te3 522.3 cubic crystals 790° C (1,454° F) N/A 5.57 g/cm3 N/A N/A N/A Safety Data Sheet

Telluride IonAmerican Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopeia/British Pharmacopeia) and follows applicable ASTM testing standards.See safety data and research below and pricing/lead time above. American Elements specializes in producing high purity Gallium(III) Telluride Sputtering Targets with the highest possible density High Purity (99.99%) Gallium(III) Telluride Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes nanoparticles. We also produce Gallium(III) as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor materials for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Periodic Table of the Elements: Gallium Information Page.

Tellurium Bohr ModelTellurium (Te) atomic and molecular weight, atomic number and elemental symbolTellurium (atomic symbol: Te, atomic number: 52) is a Block P, Group 16, Period 5 element with an atomic radius of 127.60. The number of electrons in each of tellurium's shells is 2, 8, 18, 18, 6 and its electron configuration is [Kr] 4d10 5s2 5p4. Tellurium was discovered by Franz Muller von Reichenstein in 1782 and first isolated by Martin Heinrich Klaproth in 1798. In its elemental form, tellurium has a silvery lustrous gray appearance.Elemental Tellurium The tellurium atom has a radius of 140 pm and a Van der Waals radius of 206 pm. Tellurium is most commonly sourced from the anode sludges produced as a byproduct of copper refining. The name Tellurium originates from the Greek word 'Tellus' meaning Earth. For more information on tellurium, including properties, safety data, research, and American Elements' catalog of tellurium products, visit the Tellurium Information Center.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Precautions N/A
RTECS Number N/A
Transport Information N/A
WGK Germany N/A
Globally Harmonized System of
Classification and Labelling (GHS)
N/A        

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Gallium

  • P. Zhang, L.W. Shen, J. Ouyang, Y.M. Zhang, S.Q. Wu, Z.M. Sun, Room temperature mushrooming of gallium wires and its growth mechanism, Journal of Alloys and Compounds, Volume 619, 15 January 2015
  • Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping, Journal of Alloys and Compounds, Volume 616, 15 December 2014
  • Mohamed Bakr Mohamed, M. Yehia, Cation distribution and magnetic properties of nanocrystalline gallium substituted cobalt ferrite, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Erkan Aydin, Mehmet Sankir, Nurdan Demirci Sankir, Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Ming-Wei Wu, Pang-Hsin Lai, Chia-Hong Hong, Fang-Cheng Chou, The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets, Journal of the European Ceramic Society, Volume 34, Issue 15, December 2014
  • Min-Jia Wang, Hui Yang, Qi-Long Zhang, Zhi-Sheng Lin, Zi-Shan Zhang, Dan Yu, Liang Hu, Microstructure and dielectric properties of BaTiO3 ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application, Materials Research Bulletin, Volume 60, December 2014
  • Helge Reinsch, Dirk De Vos, Structures and properties of gallium-MOFs with MIL-53-topology based on aliphatic linker molecules, Microporous and Mesoporous Materials, Volume 200, December 2014
  • V.V. Serikov, N.M. Kleinerman, A.V. Vershinin, N.V. Mushnikov, A.V. Protasov, L.A. Stashkova, O.I. Gorbatov, A.V. Ruban, Yu.N. Gornostyrev, Formation of solid solutions of gallium in Fe–Cr and Fe–Co alloys: Mössbauer studies and first-principles calculations, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Jae-Hun Jeong, Dong-Won Jung, Eun-Suok Oh, Lithium storage characteristics of a new promising gallium selenide anodic material, Journal of Alloys and Compounds, Volume 613, 15 November 2014
  • Fahmi Fariq Muhammad, Khaulah Sulaiman, Optical and morphological modifications in post-thermally treated tris(8-hydroxyquinoline) gallium films deposited on quartz substrates, Materials Chemistry and Physics, Volume 148, Issues 1–2, 14 November 2014

Recent Research & Development for Tellurides

  • Won-Yong Lee, No-Won Park, Ji-Eun Hong, Soon-Gil Yoon, Jung-Hyuk Koh, Sang-Kwon Lee, Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film, Journal of Alloys and Compounds, Volume 620, 25 January 2015
  • Xiaokang Fan, Kefeng Li, Xia Li, Peiwen Kuan, Xin Wang, Lili Hu, Spectroscopic properties of 2.7 μm emission in Er3+ doped telluride glasses and fibers, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Phuoc Huu Le, Chien-Neng Liao, Chih Wei Luo, Jihperng Leu, Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition, Journal of Alloys and Compounds, Volume 615, 5 December 2014
  • Philippe Gall, Thierry Guizouarn, Michel Potel, Patrick Gougeon, Synthesis, crystal structure, and electrical and magnetic properties of BaMo6Te6: A novel reduced molybdenum telluride containing infinite chains of trans-face shared Mo6 octahedra, Journal of Solid State Chemistry, Volume 220, December 2014
  • Masayuki Takashiri, Kazuo Imai, Masato Uyama, Harutoshi Hagino, Saburo Tanaka, Koji Miyazaki, Yoshitake Nishi, Effects of homogeneous irradiation of electron beam on crystal growth and thermoelectric properties of nanocrystalline bismuth selenium telluride thin films, Journal of Alloys and Compounds, Volume 612, 5 November 2014
  • Tobias Rosenthal, Simon Welzmiller, Lukas Neudert, Philipp Urban, Andy Fitch, Oliver Oeckler, Novel superstructure of the rocksalt type and element distribution in germanium tin antimony tellurides, Journal of Solid State Chemistry, Volume 219, November 2014
  • Zhenzhou Rong, Xi'an Fan, Fan Yang, Xinzhi Cai, Guangqiang Li, Microwave activated hot pressing: A new consolidation technique and its application to fine crystal bismuth telluride based compounds, Powder Technology, Volume 267, November 2014
  • Bárbara Tirloni, Adelheid Hagenbach, Ernesto Schulz Lang, Ulrich Abram, Thiocarbamoylbenzimidophenylselenide and -telluride and their reactions with metal ions, Polyhedron, Volume 79, 5 September 2014
  • Zhenyu Zhang, Nengdong Duan, Bo Wang, Yanxia Huo, Bi Zhang, Xianzhong Zhang, Fei Ye, Deformation and crack mechanisms of nanotwinned cadmium telluride under cyclic nanoindentations, Scripta Materialia, Available online 3 September 2014
  • M.J. Winiarski, M. Samsel-Czekała, A. Ciechan, Strain effects on electronic structure and superconductivity in the iron telluride, Intermetallics, Volume 52, September 2014