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Gallium(III) Telluride Sputtering Target

Ga2Te3
CAS 12024-27-0


Product Product Code Request Quote
(2N) 99% Gallium(III) Telluride Sputtering Target GA3-TE-02-ST Request Quote
(3N) 99.9% Gallium(III) Telluride Sputtering Target GA3-TE-03-ST Request Quote
(4N) 99.99% Gallium(III) Telluride Sputtering Target GA3-TE-04-ST Request Quote
(5N) 99.999% Gallium(III) Telluride Sputtering Target GA3-TE-05-ST Request Quote
(6N) 99.9999% Gallium(III) Telluride Sputtering Target GA3-TE-06-ST Request Quote
(7N) 99.99999% Gallium(III) Telluride Sputtering Target GA3-TE-07-ST Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Ga2Te3 12024-27-0 N/A N/A 234-690-1 N/A N/A [Ga+2].[TeH2-2] InChI=1S/Ga.Te.H/q+2;-2; GSXIPKZTZZWWRS-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Melting Point Boiling Point Density Exact Mass Monoisotopic Mass Charge MSDS
Ga2Te3 522.3 cubic crystals 790° C (1,454° F) N/A 5.57 g/cm3 N/A N/A N/A Safety Data Sheet

Telluride IonAmerican Elements specializes in producing high purity Gallium(III) Telluride Sputtering Targets with the highest possible density High Purity (99.99%) Gallium(III) Telluride Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes nanoparticles.Other shapes are available by request.

Gallium (Ga) atomic and molecular weight, atomic number and elemental symbolGallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster. For more information on gallium, including properties, safety data, research, and American Elements' catalog of gallium products, visit our Gallium element page.

Tellurium Bohr ModelTellurium (Te) atomic and molecular weight, atomic number and elemental symbolTellurium (atomic symbol: Te, atomic number: 52) is a Block P, Group 16, Period 5 element with an atomic radius of 127.60. The number of electrons in each of tellurium's shells is 2, 8, 18, 18, 6 and its electron configuration is [Kr] 4d10 5s2 5p4. Tellurium was discovered by Franz Muller von Reichenstein in 1782 and first isolated by Martin Heinrich Klaproth in 1798. In its elemental form, tellurium has a silvery lustrous gray appearance.Elemental Tellurium The tellurium atom has a radius of 140 pm and a Van der Waals radius of 206 pm. Tellurium is most commonly sourced from the anode sludges produced as a byproduct of copper refining. The name Tellurium originates from the Greek word Tellus, meaning Earth. For more information on tellurium, including properties, safety data, research, and American Elements' catalog of tellurium products, visit the Tellurium element page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Precautions N/A
RTECS Number N/A
Transport Information N/A
WGK Germany N/A
Globally Harmonized System of
Classification and Labelling (GHS)
N/A        

CUSTOMERS FOR GALLIUM (III) TELLURIDE SPUTTERING TARGET HAVE ALSO LOOKED AT
Gallium Acetylacetonate Gallium Acetate Gallium Fluoride Gallium Antimonide Triethylgallium
Copper Indium Gallium Selenide - CIGS Gallium Arsenide Gallium Oxide Nanopowder Gallium Oxide Powder Gallium Nitride Wafer
Gadolinium Gallium Garnet - GGG Copper Gallium Sputtering Target Trimethylgallium Gallium doped Zinc Oxide - GZO Gallium Oxide
Show Me MORE Forms of Gallium

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Gallium

  • Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching. Swain B, Mishra C, Kang L, Park KS, Lee CG, Hong HS. Environ Res. 2015 Apr: Environ Res
  • High Final Energy of Low-Level Gallium Arsenide Laser Therapy Enhances Skeletal Muscle Recovery without a Positive Effect on Collagen Remodeling. de Freitas CE, Bertaglia RS, Vechetti Júnior IJ, Mareco EA, Salomão RA, de Paula TG, Nai GA, Carvalho RF, Pacagnelli FL, Dal-Pai-Silva M. Photochem Photobiol. 2015 Mar 7.: Photochem Photobiol
  • Nanoparticles: mechanically sintered gallium-indium nanoparticles (adv. Mater. 14/2015). Boley JW, White EL, Kramer RK. Adv Mater. 2015 Apr: Adv Mater
  • Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature. Alam K, Foley A, Smith AR. Nano Lett. 2015 Mar 11
  • Effects of erbium-and chromium-doped yttrium scandium gallium garnet and diode lasers on the surfaces of restorative dental materials: A scanning electron microscope study. Hatipoglu M, Barutcigil C. Niger J Clin Pract. 2015 Mar-Apr
  • Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures. Zhou X, Lu MY, Lu YJ, Jones EJ, Gwo S, Grade?ak S. ACS Nano. 2015 Feb 12.
  • Fabrication and characterization of cerium-doped terbium gallium garnet with high magneto-optical properties. Chen Z, Hang Y, Yang L, Wang J, Wang X, Hong J, Zhang P, Shi C, Wang Y. Opt Lett. 2015 Mar 1
  • The E1-E2 center in gallium arsenide is the divacancy. Schultz PA. J Phys Condens Matter. 2015 Feb 25
  • High Final Energy of Low - Level Gallium Arsenide Laser Therapy Enhances Skeletal Muscle Recovery without a Positive Effect on Collagen Remodeling. de Freitas CE, Bertaglia RS, Vechetti Júnior IJ, Mareco EA, Salomão RA, de Paula TG, Nai GA, Carvalho RF, Pacagnelli FL, Dal-Pai-Silva M. Photochem Photobiol. 2015 Mar 7.
  • Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching. Swain B, Mishra C, Kang L, Park KS, Lee CG, Hong HS. Environ Res. 2015 Mar 10
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Recent Research & Development for Tellurides

  • A turn-on fluorescent probe for hypochlorous acid based on the oxidation of diphenyl telluride. Venkatesan P, Wu SP. Analyst. 2015 Feb 21: Analyst
  • A density-functional study on the electronic and vibrational properties of layered antimony telluride. Stoffel RP, Deringer VL, Simon RE, Hermann RP, Dronskowski R. J Phys Condens Matter. 2015 Mar 4: J Phys Condens Matter
  • Boundary Engineering for the Thermoelectric Performance of Bulk Alloys Based on Bismuth Telluride. Mun H, Choi SM, Lee KH, Kim SW. ChemSusChem. 2015 Mar 17.: ChemSusChem
  • Antibacterial potential of rutin conjugated with thioglycolic acid capped cadmium telluride quantum dots (TGA-CdTe QDs). Ananth DA, Rameshkumar A, Jeyadevi R, Jagadeeswari S, Nagarajan N, Renganathan R, Sivasudha T. Spectrochim Acta A Mol Biomol Spectrosc. 2015 Mar 5: Spectrochim Acta A Mol Biomol Spectrosc
  • Cadmium telluride (CdTe) and cadmium selenide (CdSe) leaching behavior and surface chemistry in response to pH and O2. Zeng C, Ramos-Ruiz A, Field JA, Sierra-Alvarez R. J Environ Manage. 2015 May 1: J Environ Manage
  • Cadmium telluride quantum dots (CdTe-QDs) and enhanced ultraviolet-B (UV-B) radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings. Chen H, Gong Y, Han R. PLoS One. 2014 Oct 20
  • Cadmium telluride (CdTe) and cadmium selenide (CdSe) leaching behavior and surface chemistry in response to pH and O2. Zeng C, Ramos-Ruiz A, Field JA, Sierra-Alvarez R. J Environ Manage. 2015 Feb 21
  • A fumonisins immunosensor based on polyanilino-carbon nanotubes doped with palladium telluride quantum dots. Masikini M, Mailu SN, Tsegaye A, Njomo N, Molapo KM, Ikpo CO, Sunday CE, Rassie C, Wilson L, Baker PG, Iwuoha EI. Sensors (Basel). 2014 Dec 30
  • Mechanism of Bismuth Telluride Exfoliation in an Ionic Liquid Solvent. Ludwig T, Guo L, McCrary PD, Zhang Z, Gordon H, Quan H, Stanton M, Frazier R, Rogers RD, Wang HT, Turner CH. Langmuir. 2015 Mar 11.
  • Nature of AX Centers in Antimony-Doped Cadmium Telluride Nanobelts. Huang L, Lin CC, Riediger M, Röder R, Tse PL, Ronning C, Lu JG. Nano Lett. 2015 Feb 11