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Indium Gallium Nitride Sputtering Target

Linear Formula:

InGaN

MDL Number

N/A

EC No.:

N/A

ORDER

Product	Product Code	ORDER	SAFETY DATA	Technical data
(2N) 99% Indium Gallium Nitride Sputtering Target	IN-GAN-02-ST	Pricing Add to cart only	SDS >	Data Sheet >
(3N) 99.9% Indium Gallium Nitride Sputtering Target	IN-GAN-03-ST	Pricing Add to cart only	SDS >	Data Sheet >
(4N) 99.99% Indium Gallium Nitride Sputtering Target	IN-GAN-04-ST	Pricing Add to cart only	SDS >	Data Sheet >
(5N) 99.999% Indium Gallium Nitride Sputtering Target	IN-GAN-05-ST	Pricing Add to cart only	SDS >	Data Sheet >

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Indium Gallium Nitride Sputtering Target Properties (Theoretical)

Compound Formula	InGaN
Molecular Weight	198.55
Appearance	Solid
Melting Point	N/A
Boiling Point	N/A
Density	N/A
Solubility in H2O	N/A
Electrical Resistivity	7.81 x 10^{-3^{Ω·cm (675 °C)}}
Refractive Index	n20/D 2.59

Indium Gallium Nitride Sputtering Target Health & Safety Information

Signal Word	N/A
Hazard Statements	N/A
Hazard Codes	N/A
Risk Codes	N/A
Safety Statements	N/A
Transport Information	N/A

About Indium Gallium Nitride Sputtering Target

American Elements specializes in producing high purity Indium Gallium Nitride Sputtering Targets with the highest possible density

High Purity (99.99%) Indium Gallium Nitride Sputtering Target

and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard sputtering targets for thin film deposition are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Rotary (cylindrical), round, rectangular, square, ring, annular, oval, "dog-bone" and other shaped targets are available in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please request a quote above for more information on lead time and pricing.

Synonyms

InGaN, InxGa1-xN, GaN-InN, In(0.25)Ga(0.75)N

Chemical Identifiers

Linear Formula	InGaN
Pubchem CID	N/A
MDL Number	N/A
EC No.	N/A
Beilstein/Reaxys No.
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

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Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d¹⁰ 4s² 4p¹. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Gallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia' referring to Gaul, the old name of France.

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d¹⁰ 5s² 5p¹. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. It is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to gallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

See more Nitrogen products. Nitrogen is a Block P, Group 15, Period 2 element. Its electron configuration is [He]2s²2p³. Nitrogen is an odorless, tasteless, colorless and mostly inert gas. It is the seventh most abundant element in the universe and it constitutes 78.09% (by volume) of Earth's atmosphere. Nitrogen was discovered by Daniel Rutherford in 1772.