(2N) 99%  •  (3N) 99.9%  •  (4N) 99.99%  •  (5N) 99.999%  •  (6N) 99.9999%


AE Solar Energy™

32.4 (A)/00.023

  Hydrogen                                 Helium
  Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
  Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
  Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Nickel Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
  Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
  Cesium Barium Lanthanum Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
  Francium Radium Actinium Rutherfordium Dubnium Seaborgium Bohrium Hassium Meitnerium Darmstadtium Roentgenium Copernicium Ununtrium Flerovium Ununpentium Livermorium Ununseptium Ununoctium
      Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
      Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium    

American Elements is a manufacturer and supplier specializing in materials essential to several photovoltaic solar energy technologies.

When the sun's energy in the form of photons collects in the cell layers in a volume sufficient to force electrons in the layer materials from their "Valence Band" to their "Conduction Band", electrons from the layers are released. This energy threshold is referred to as the "Band Gap". These freed electrons naturally attempt to flow from the negatively charge n-type layer to the positively charged p-type layer. For this reason, the p-type layer is also sometimes called the "Absorption Layer" and the n-type layer is called the "Emitter Layer".

However, the boundary between these two layers, which is called the "P-N Junction" or "Adhesion Layer" blocks their flow. Collection circuits are attached from the n-type layer to the p-type layer to allow for the electrons to reach their target and complete the circuit. Energy in the form of electricity is collected or harvested from this external circuit.


The history of solar energy materials began in the 1970s with the first silicon-based photovoltaic (PV) cells. These basic cells were created by doping silicon to form two oppositely charged layers. A positively charged or p-type layer underneath a negatively charged or n-type layer. In first configurations the p-type layer was doped with boron to create the positive charge and n-type layer was doped with phosphorous.

These silicon based photovoltaic cells have gone through several generations of development designed to reduce production costs. Originally the layers were produced by growing and slicing doped single crystals of silicon. To save cost producers began casting shapes using polycrystalline silicon. While less expensive to produce, efficiencies are also lower. A silicon single crystal may have as high as 30% efficiency; polycrystalline silicon might reach 10-15%. The least expensive approach but also the least efficient cell (approximately 5%) is produced through thin film deposition of amorphous silicon using sputtering techniques.

Presently, most silicon-based PV solar cells are produced from polycrystalline silicon with single crystal systems the next most common.

All silicon-based photovoltaic solar energy collectors, however, suffer from their ability to absorb energy from a relatively narrow range of the sun's light wave emission. Substantial research ha gone into developing materials that can either expand the band gap or create multiple band gaps in order to absorb a greater portion of the solar energy spectrum. This has lead to the development of PV cells based on Copper Indium Selenide (CuInSe2) or "CIS" Absorption Layers which can capture energy from portions of the light's spectrum not collected by silicon-based PV cells. Doping CIS with Gallium increases the band gap even further and as such most PV cells are now based on Copper Indium Gallium Selenide Single photovoltaic cell(CuInGaSe2) and are referred to as "CIGS".

In the typical CIGS photovoltaic cell, the CIGS layer acts as the the p-type or absorption layer. A second material, Cadmium Selenide (CdSe) functions as the emitter or n-type layer. Because two different materials are uses these are sometimes referred to as "Heterojunction" systems. The external circuit is provided by a zinc oxide contact layer on the n-type layer and a Molybdenum metal contact layer on the p-type layer.

CIGS Solar PanelCIGS based solar cells are a rapidly growing segment of the solar energy market. Besides being more efficient that silicon-based solar cells and therefore less expensive per watt of energy generated, they can be designed to bend to complex geometries and are very light weight. Due to their high efficiency, layers can be achieved using thin film techniques. Thin film deposition of Silicon Nanoparticle quantum dots on the polycrystalline silicon substrate of a photovoltaic (solar) cell increases voltage output as much as 60% by fluorescing the incoming light prior to capture.

Other promising designs include cells based on III-IV Nitride materials and research on Zinc Manganese Telluride, Cadmium Telluride (CdTe) and Gallium Selenide p-type layers.

The band gap for III-IV Nitride materials, such as Gallium Indium Nitride, covers nearly the entire energy spectrum of the sun because of multiple band gaps in the semiconductor materials. Similarly, Zinc Manganese Telluride crystals have three band gaps which can absorb greater than 50% of the solar energy spectrum.

Further important research involves nanotechnology approaches using nanoparticles of the above materials. Below please find further technical and safety information on solar energy materials manufactured by American Elements' AE Solar Energy™ group.

AE Solar Energy™ Materials

Silicon-Based PV Cells (p- and n-type) CIS, CIGS and CIGSS-Based PV Cells Other PV Cell Technologies
Single Crystal Silicon Ingot
Polycrystalline Silicon Powder
Amorphous Silicon Powder
Silicon Sputtering Target
Silicon Rod
Silicon Pellets
Silicon Nanoparticles
Copper Indium Selenide Single Crystal
Copper Indium Selenide Powder
Copper Indium Selenide Sputtering Target
Copper Indium Selenide Nanoparticles
Copper Indium Gallium Selenide Single Crystal
Copper Indium Gallium Selenide Powder
Copper Indium Gallium Selenide Nanoparticles
Copper Indium Gallium Sulfur Selenide Powder
Copper Indium Gallium Sulfur Selenide Sputtering Target
Copper Selenide Sputtering Target
Indium Selenide Sputtering Target
Copper Gallium Selenide Sputtering Target
Molybdenum Sputtering Target
Zinc Oxide Sputtering Target
Zinc Oxide Nanopowder, Z-Mite™
Zinc Manganese Telluride
Cadmium Telluride
Gallium Selenide Single Crystal
Gallium Selenide Sputtering Target
Gallium Arsenide

Recent Research & Development for Solar Energy

  • L.E.G. Cambronero, I. Cañadas, J.M. Ruiz-Román, M. Cisneros, F.A. Corpas Iglesias, Weld structure of joined aluminium foams with concentrated solar energy, Journal of Materials Processing Technology, Volume 214, Issue 11, November 2014
  • Liang Li, Yulin Yang, Ruiqing Fan, Yanxia Jiang, Liguo Wei, Yan Shi, Jia Yu, Shuo Chen, Ping Wang, Bin Yang, Wenwu Cao, A simple modification of near-infrared photon-to-electron response with fluorescence resonance energy transfer for dye-sensitized solar cells, Journal of Power Sources, Volume 264, 15 October 2014
  • Chi-Feng Lin, Valerie Nichols, Yung-Chih Cheng, Christopher J. Bardeen, Mau-Kuo Wei, Shun-Wei Liu, Chih-Chien Lee, Wei-Cheng Su, Tien-Lung Chiu, Hsieh-Cheng Han, Li-Chyong Chen, Chin-Ti Chen, Jiun-Haw Lee, Erratum to “Chloroboron subphthalocyanine/C60 planar heterojunction organic solar cell with N,N-dicarbazolyl-3,5-benzene blocking layer” [Sol. Energy Mater. Sol. Cells 122 (2014) 264–270], Solar Energy Materials and Solar Cells, Volume 128, September 2014
  • Jung Wook Lim, Myunghun Shin, Da Jung Lee, Seong Hyun Lee, Sun Jin Yun, Highly transparent amorphous silicon solar cells fabricated using thin absorber and high-bandgap-energy n/i-interface layers, Solar Energy Materials and Solar Cells, Volume 128, September 2014
  • Xing Huang, Yuan Yuan, Yong Shuai, Bing-Xi Li, He-Ping Tan, Development of a multi-layer and multi-dish model for the multi-dish solar energy concentrator system, Solar Energy, Volume 107, September 2014
  • C. Zamfirescu, I. Dincer, Assessment of a new integrated solar energy system for hydrogen production, Solar Energy, Volume 107, September 2014
  • S. Ghosh, I. Dincer, Development and analysis of a new integrated solar-wind-geothermal energy system, Solar Energy, Volume 107, September 2014
  • Mohammad Abutayeh, Anas Alazzam, Bashar El-Khasawneh, Corrigendum to “Balancing heat transfer fluid flow in solar fields” [Solar Energy 105 (2014) 381–389], Solar Energy, Volume 107, September 2014
  • Dajun Yue, Fengqi You, Seth B. Darling, Corrigendum to “Domestic and overseas manufacturing scenarios of silicon-based photovoltaics: Life cycle energy and environmental comparative analysis” [Solar Energy 105 (2014) 669–678], Solar Energy, Volume 107, September 2014
  • Ali Grine, Asma Radjouh, Souad Harmand, Erratum to “Analytical modelling using Green’s functions of heat transfer in a flat solar air collector” [Solar Energy 105 (2014) 760–769], Solar Energy, Volume 107, September 2014

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