wpe6.gif (6819 bytes)

99% 2N 99.9% 3N     99.99% 4N   99.999% 5N     99.9999% 6N 

SEMICONDUCTOR MATERIAL
HIGH PURITY AND ULTRA HIGH PURITY
POWDER, CHUNK, LUMP

Specializing in High Purity Semiconductors, materials essential to computing, lighting, solar energy and telecommunications.
32.4 (A)/00.022

Tellurides

Gallium(II) Selenide Gallium(II) Sulfide Lead Oxide Bismuth
Aluminum Telluride Germanium Selenide Germanium Sulfide Tellurium Oxide Cadmium
Antimony Telluride  Germanium(II) Selenide Germanium(II) Sulfide Tin Oxide Copper
Arsenic Telluride Indium Selenide Indium Sulfide  

Gallium
Bismuth Telluride Indium(II) Selenide Lead Sulfide Arsenides Germanium
Cadmium Telluride Lead Selenide Sliver Sulfide Cadmium Arsenide Indium
Gallium(II) Telluride Silver Selenide Tin Sulfide Cadmium(IV) Arsenide Lead
Gallium(III) Telluride Tin Selenide Zinc Sulfide Gallium Arsenide Magnesium
Germanium Telluride Tin(II) Selenide   Indium Arsenide Phosphorus
Indium Telluride Zinc Selenide

Antimonides

 Silicon Arsenide Selenium
Indium(III) Telluride   Aluminum Antimonide Tin Arsenide Silver
Lead Telluride
Phosphides
Cadmium Antimonide Zinc Arsenide Silicon
Silver Telluride Indium Phosphide Gallium Antimonide Zinc(II) Arsenide Sulfur
Tin Telluride Zinc Phosphide Lead Antimonide   Tellurium
Zinc Telluride   Indium Antimonide Other Tin
 

Sulfides

Zinc Antimonide Indium Bismuth Zinc

Selenides

Aluminum Sulfide   Magnesium Silicide  
Aluminum Selenide Antimony Sulfide Oxides Tin Chloride  
Antimony Selenide Arsenic Sulfide Antimony Oxide    
Arsenic Selenide Bismuth Sulfide Bismuth Oxide

Single Element

 
Bismuth Selenide Cadmium Sulfide Gallium Oxide Aluminum  
Cadmium Selenide Copper Sulfide Indium Oxide Antimony  
Gallium Selenide Gallium Sulfide Indium Tin Oxide Arsenic  

Semiconductor materials are single element and multi-element single crystal structures with unique electrical and photonic properties. See Crystal Growth for processes to fabricate semiconductor materials, which include:

  • Crystal "pulling" by the Czochaiski method for production of semiconductor materials

  • Flux growth and gradient freeze

  • Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques

 


Hydrogen                                 Helium
Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Nickel Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
Cesium Barium Lanthanum Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
                                   
    Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
    Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium      

(click on an element to view our products)


Having the properties of both conductors and insulators, "semi-conductors" provide many of the essential technological capabilities of a varied class of industrial and scientific applications beginning with silicon in the first integrated circuitry in the 1940s to cadmium telluride in state-of-the-art solar energy layers. See discussion of how semiconductors work in solar energy at AE Solar Energy.

American Elements semi conducting materials are produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors, all supported by our extensive analytical laboratory including X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities.

 




PRODUCT CATALOG
U.S. Operations
 Price Quote
Nanoparticles
 Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Advanced Materials Information Center
Home

 

 

 

 

Recent Research & Development for Semiconductor Materials

  • Topochemical 3D Polymerization of C(60) under High Pressure at Elevated Temperatures. J Am Chem Soc. 2008 Mar 11; [Epub ahead of print]

  • Study of the factors affecting the photoelectrode characteristics of a perylene/phthalocyanine bilayer working in the water phase. Phys Chem Chem Phys. 2008 Mar 21;10(11):1562-8. Epub 2008 Jan 30.

  • Spatial-mode control of vertical-cavity lasers with micromirrors fabricated and replicated in semiconductor materials. Appl Opt. 1999 May 10;38(14):3030-8.

  • Abstract Bernas ion source discharge simulation. Rev Sci Instrum. 2008 Feb;79(2):02B313.

  • Optical surface waves supported and controlled by thermal waves. Opt Lett. 2008 Mar 1;33(5):506-8.

  • Explicit solutions for the optical properties of arbitrary magneto-optic materials in generalized ellipsometry. Appl Opt. 1999 Jan 1;38(1):177-87.

  • Ferromagnetic and half-metallic behaviors of fullerene-cobalt polymer chains. J Chem Phys. 2008 Feb 21;128(7):074707.

  • Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface. J Chem Phys. 2008 Feb 21;128(7):074705.

  • Abstract Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices. Nano Lett. 2008 Feb 26; [Epub ahead of print]

  • Effect of LED curing modes on postoperative sensitivity after Class II resin composite restorations. J Adhes Dent. 2007 Oct;9(5):477-81.

  • Abstract Influence of ceramic translucency on curing efficacy of different light-curing units. J Adhes Dent. 2007 Oct;9(5):449-62.

  • Thin film structure of tetraceno[2,3-b]thiophene characterized by grazing incidence X-ray scattering and near-edge X-ray absorption fine structure analysis. J Am Chem Soc. 2008 Mar 19;130(11):3502-8. Epub 2008 Feb 23.

  • p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells. Proc Natl Acad Sci U S A. 2008 Feb 26;105(8):2783-7. Epub 2008 Feb 19.

  • Standards for Which the Ellipsometric Parameter psi Remains Insensitive to Variations in the Angle of Incidence. Appl Opt. 1998 Sep 1;37(25):5912-22.

  • Fiber-coupled high-power external-cavity semiconductor lasers for real-time Raman sensing. Appl Opt. 1998 Aug 20;37(24):5755-9.

  • Abstract Dynamics of the Photoexcited Electron at the Chromophore-Semiconductor Interface. Acc Chem Res. 2008 Feb 19;41(2):339-348. Epub 2008 Feb 19.

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits. Nat Mater. 2008 Mar;7(3):216-21. Epub 2008 Feb 17.

  • Microfibre-nanowire hybrid structure for energy scavenging. Nature. 2008 Feb 14;451(7180):809-13.

  • Free Full Text High surface area silicon materials: fundamentals and new technology. Philos Transact A Math Phys Eng Sci. 2006 Jan 15;364(1838):217-25. Review.

  • Porous low dielectric constant materials for microelectronics. Philos Transact A Math Phys Eng Sci. 2006 Jan 15;364(1838):201-15. Review.


PRODUCT LIST



American Elements Products can also be sourced at these sites:
 
 
 
electronics-ee.com